Intensive measures of luminescence in GaN/InGaN heterostructures
Autoři:
Jui-Ju Hsiao aff001; Yi-Jen Huang aff001; Hung-Ing Chen aff001; Joe-Air Jiang aff002; Jen-Cheng Wang aff001; Ya-Fen Wu aff003; Tzer-En Nee aff001
Působiště autorů:
Graduate Institute of Electro-optical Engineering and Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
aff001; Department of Biomechatronics Engineering, National Taiwan University, Taipei, Taiwan, Republic of China
aff002; Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City, Taiwan, Republic of China
aff003; Department of Oral and Maxillofacial Surgery, Linkou Chang Gung Memorial Hospital, Kwei-Shan, Tao-Yuan, Taiwan, Republic of China
aff004
Vyšlo v časopise:
PLoS ONE 14(9)
Kategorie:
Research Article
doi:
https://doi.org/10.1371/journal.pone.0222928
Souhrn
The intensive measures of luminescence in a GaN/InGaN multiple quantum well system are used to examine the thermodynamics and phenomenological structure. The radiative /nonradiative transitions along with absorbed or emitted phonons that occur between the different quantum states of the electrons and holes associated with these processes make the quantum efficiency of a semiconductor nanosystem in an equilibrium state an extensive property. It has long been recognized that tuning of the indium (In) composition in InGaN interlayers gives the potential to obtain a spectrum in the near-infrared to near-ultraviolet spectral range. The thermodynamic intensive properties, including the Debye temperature, carrier temperature, and junction temperature, are the most appropriate metrics to describe the optical-related interactions inherent in a given heterostructure and so can be used as the state variables for understanding the quantum exchange behaviors. The energetic features of the quantum processes are characterized based on analysis of the intensive parameters as determined by means of electroluminescence (EL) and photoluminescence (PL) spectroscopy and current-voltage measurement and then correlated with the designed InGaN/GaN microstructures. According to the McCumber-Sturge theory, the EL and PL Debye temperatures obtained experimentally signal the strength of the electron-phonon and photon-phonon interaction, respectively, while the EL and PL carrier/junction temperatures correspond to the carrier localization. Higher EL Debye temperatures and lower EL carrier/junction temperatures reflect significantly higher luminescence quantum yields, indicative of electron-phonon coupling in the transfer of thermal energy between the confined electrons and the enhancement by excited phonons of heat-assisted emissions. On the other hand, the observation of low luminescence efficiency, corresponding to the lower PL Debye temperatures and higher PL carrier/junction temperatures, is attributed to photon-phonon coupling. These findings are in good accordance to the dependence of the EL and PL quantum efficiency on the In-content of the InGaN/GaN barriers, suggesting that the characteristic Debye and carrier/junction temperatures are intensive parameters useful for assessing the optical properties of a nano-engineered semiconductor heterostructure.
Klíčová slova:
Engineers – Thermodynamics – Luminescence – Phonons – Photons – Indium – Electrons – Energy transfer
Zdroje
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